There are two main phases in making an LED 730nm: To begin, epitaxial wafers made from gallium nitride (GAN) are neatly arranged on the base material. Metal-organic chemical vapor deposition epitaxial wafer furnaces are where the bulk of this work is done (MOCVD). Epitaxial wafers based on GaN may be fabricated step-by-step after the material source, and the numerous high-purity gases needed for the process have been prepared. Sapphire, silicon carbide, and silicon are the most used substrates. Also, additional materials such as GaAs, AlN, and ZnO. 

To deposit the necessary products on the substrate surface, MOCVD employs vapor phase reactants (precursors), group III organic metals, and group V NH3. The variables that may be manipulated include temperature, pressure, reactant concentration, and type ratio. As well as manage the chemical make-up of the coating and the quality of the crystals. The metal-organic chemical-vapor-deposition (MOCVD) epitaxial furnace is the workhorse of UVA LED epitaxial wafer fabrication. 

The LED PN junction’s two electrodes are then treated. Processing at the electrode, which includes washing, evaporation, yellow light, chemical etching, fusing, and grinding, is essential to creating an LED chip. The necessary LED chip may be obtained if the chip cleaning is inadequate by scribing, testing, and sorting the LED chip. Additionally, there are issues with the evaporation mechanism that leads to the evaporated metal layer (the electrode after etching) peeling off, the metal layer’s color shifting, the presence of gold bubbles, and other anomalies. Marks from the spring clip used to hold the chip in place during evaporation might be expected. Baking, photo resisting, photographic exposure, developing, and so on are all examples of yellow light operations of LED Chip Manufacturer

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